Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy
Identifieur interne : 000160 ( Chine/Analysis ); précédent : 000159; suivant : 000161Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy
Auteurs : RBID : Pascal:13-0216429Descripteurs français
- Pascal (Inist)
- Propriété optique, Composé III-V, Couche mince, Epitaxie phase vapeur, Méthode MOVPE, Photoluminescence, Transmission optique, Spectre absorption, Facteur réflexion, Spectre réflexion, Dépendance température, Mécanisme croissance, Densité porteur charge, Trempe, Nitrure d'indium, Réseau cubique, Densité élevée, Recombinaison non radiative, Limite absorption, Déplacement raie, Effet de Burstein Moss, InN, CaSe, 7866, 8115K, 8115G, 7855.
English descriptors
- KwdEn :
- Absorption edge, Absorption spectra, Burstein Moss effect, Carrier density, Cubic lattices, Growth mechanism, High density, III-V compound, Indium nitride, MOVPE method, Non radiative recombination, Optical properties, Optical transmission, Photoluminescence, Quenching, Reflection spectrum, Reflectivity, Spectral line shift, Temperature dependence, Thin films, VPE.
Abstract
InN thin films have been grown using a pressurized-reactor metalorganic vapor phase epitaxy system at 500- 700 °C under the pressure of 2.1 x 105 Pa. Photoluminescence (PL), optical reflectance and transmission measurements were performed at room temperature. We found that optical properties of these as-grown films strongly depend on the growth temperature. By analyzing the reflectance spectra, it is found that the calculated carrier concentrations of the films increased with decreasing growth temperature. Room-temperature photoluminescence spectra show that the films grown at temperatures higher than 575 °C have strong emission peaks at 0.68- 0.75 eV, while those grown at temperatures lower than and equal to 575 °C have negligible emission. The quenching of the emission is attributed to the existences of cubic InN and a high-density of nonradiative recombination centers in the films grown at low growth temperature region. Especially for the case of high temperature growth, the growth temperature dependence of the absorption-edge energy shows a similar tendency with that of the PL peak energy, both blue-shifted with decreasing the growth temperature possibly due to the well-known Burstein-Moss effects. From these results, an optimum growth temperature of 675 °C in the pressurized growth could be obtained.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000B83
- to stream Main, to step Repository: 000787
- to stream Chine, to step Extraction: 000160
Links to Exploration step
Pascal:13-0216429Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy</title><author><name>YUANTAO ZHANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University</s1><s2>Sendai 980-8577</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University</s1><s2>Changchun 130012</s2><s3>CHN</s3><sZ>1 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Changchun</settlement><region type="province">Jilin</region><region type="groupement">Dongbei</region></placeName></affiliation></author><author><name sortKey="Kimura, Takeshi" uniqKey="Kimura T">Takeshi Kimura</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University</s1><s2>Sendai 980-8577</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author><author><name sortKey="Prasertusk, Kiattiwut" uniqKey="Prasertusk K">Kiattiwut Prasertusk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University</s1><s2>Sendai 980-8577</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author><author><name sortKey="Iwabuchi, Takuya" uniqKey="Iwabuchi T">Takuya Iwabuchi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University</s1><s2>Sendai 980-8577</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author><author><name sortKey="Kumar, Suresh" uniqKey="Kumar S">Suresh Kumar</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University</s1><s2>Sendai 980-8577</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author><author><name>YUHUAI LIU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University</s1><s2>Sendai 980-8577</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author><author><name sortKey="Katayama, Ryuji" uniqKey="Katayama R">Ryuji Katayama</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University</s1><s2>Sendai 980-8577</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author><author><name sortKey="Matsuoka, Takashi" uniqKey="Matsuoka T">Takashi Matsuoka</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University</s1><s2>Sendai 980-8577</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0216429</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0216429 INIST</idno><idno type="RBID">Pascal:13-0216429</idno><idno type="wicri:Area/Main/Corpus">000B83</idno><idno type="wicri:Area/Main/Repository">000787</idno><idno type="wicri:Area/Chine/Extraction">000160</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption edge</term><term>Absorption spectra</term><term>Burstein Moss effect</term><term>Carrier density</term><term>Cubic lattices</term><term>Growth mechanism</term><term>High density</term><term>III-V compound</term><term>Indium nitride</term><term>MOVPE method</term><term>Non radiative recombination</term><term>Optical properties</term><term>Optical transmission</term><term>Photoluminescence</term><term>Quenching</term><term>Reflection spectrum</term><term>Reflectivity</term><term>Spectral line shift</term><term>Temperature dependence</term><term>Thin films</term><term>VPE</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Propriété optique</term><term>Composé III-V</term><term>Couche mince</term><term>Epitaxie phase vapeur</term><term>Méthode MOVPE</term><term>Photoluminescence</term><term>Transmission optique</term><term>Spectre absorption</term><term>Facteur réflexion</term><term>Spectre réflexion</term><term>Dépendance température</term><term>Mécanisme croissance</term><term>Densité porteur charge</term><term>Trempe</term><term>Nitrure d'indium</term><term>Réseau cubique</term><term>Densité élevée</term><term>Recombinaison non radiative</term><term>Limite absorption</term><term>Déplacement raie</term><term>Effet de Burstein Moss</term><term>InN</term><term>CaSe</term><term>7866</term><term>8115K</term><term>8115G</term><term>7855</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">InN thin films have been grown using a pressurized-reactor metalorganic vapor phase epitaxy system at 500- 700 °C under the pressure of 2.1 x 10<sup>5</sup> Pa. Photoluminescence (PL), optical reflectance and transmission measurements were performed at room temperature. We found that optical properties of these as-grown films strongly depend on the growth temperature. By analyzing the reflectance spectra, it is found that the calculated carrier concentrations of the films increased with decreasing growth temperature. Room-temperature photoluminescence spectra show that the films grown at temperatures higher than 575 °C have strong emission peaks at 0.68- 0.75 eV, while those grown at temperatures lower than and equal to 575 °C have negligible emission. The quenching of the emission is attributed to the existences of cubic InN and a high-density of nonradiative recombination centers in the films grown at low growth temperature region. Especially for the case of high temperature growth, the growth temperature dependence of the absorption-edge energy shows a similar tendency with that of the PL peak energy, both blue-shifted with decreasing the growth temperature possibly due to the well-known Burstein-Moss effects. From these results, an optimum growth temperature of 675 °C in the pressurized growth could be obtained.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>536</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy</s1></fA08><fA11 i1="01" i2="1"><s1>YUANTAO ZHANG</s1></fA11><fA11 i1="02" i2="1"><s1>KIMURA (Takeshi)</s1></fA11><fA11 i1="03" i2="1"><s1>PRASERTUSK (Kiattiwut)</s1></fA11><fA11 i1="04" i2="1"><s1>IWABUCHI (Takuya)</s1></fA11><fA11 i1="05" i2="1"><s1>KUMAR (Suresh)</s1></fA11><fA11 i1="06" i2="1"><s1>YUHUAI LIU</s1></fA11><fA11 i1="07" i2="1"><s1>KATAYAMA (Ryuji)</s1></fA11><fA11 i1="08" i2="1"><s1>MATSUOKA (Takashi)</s1></fA11><fA14 i1="01"><s1>Institute for Materials Research, Tohoku University</s1><s2>Sendai 980-8577</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University</s1><s2>Changchun 130012</s2><s3>CHN</s3><sZ>1 aut.</sZ></fA14><fA20><s1>152-155</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000503815090220</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>16 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0216429</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>InN thin films have been grown using a pressurized-reactor metalorganic vapor phase epitaxy system at 500- 700 °C under the pressure of 2.1 x 10<sup>5</sup> Pa. Photoluminescence (PL), optical reflectance and transmission measurements were performed at room temperature. We found that optical properties of these as-grown films strongly depend on the growth temperature. By analyzing the reflectance spectra, it is found that the calculated carrier concentrations of the films increased with decreasing growth temperature. Room-temperature photoluminescence spectra show that the films grown at temperatures higher than 575 °C have strong emission peaks at 0.68- 0.75 eV, while those grown at temperatures lower than and equal to 575 °C have negligible emission. The quenching of the emission is attributed to the existences of cubic InN and a high-density of nonradiative recombination centers in the films grown at low growth temperature region. Especially for the case of high temperature growth, the growth temperature dependence of the absorption-edge energy shows a similar tendency with that of the PL peak energy, both blue-shifted with decreasing the growth temperature possibly due to the well-known Burstein-Moss effects. From these results, an optimum growth temperature of 675 °C in the pressurized growth could be obtained.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15G</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H55</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Propriété optique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Optical properties</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Composé III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>III-V compound</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Couche mince</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Thin films</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>VPE</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Méthode MOVPE</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>MOVPE method</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Método MOVPE</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Transmission optique</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Optical transmission</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Transmisión óptica</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Facteur réflexion</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Reflectivity</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Spectre réflexion</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Reflection spectrum</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Espectro reflexión</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Dépendance température</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Densité porteur charge</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Carrier density</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Trempe</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Quenching</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Indium nitride</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Réseau cubique</s0><s5>29</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Cubic lattices</s0><s5>29</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Densité élevée</s0><s5>30</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>High density</s0><s5>30</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Densidad elevada</s0><s5>30</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Recombinaison non radiative</s0><s5>31</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Non radiative recombination</s0><s5>31</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Recombinación no radiativa</s0><s5>31</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Limite absorption</s0><s5>32</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Absorption edge</s0><s5>32</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Déplacement raie</s0><s5>33</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Spectral line shift</s0><s5>33</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Effet de Burstein Moss</s0><s5>34</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Burstein Moss effect</s0><s5>34</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Efecto Burstein Moss</s0><s5>34</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>InN</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>CaSe</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>7866</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>8115K</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>8115G</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>7855</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>196</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Chine/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000160 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd -nk 000160 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Chine
|étape= Analysis
|type= RBID
|clé= Pascal:13-0216429
|texte= Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy
}}
| This area was generated with Dilib version V0.5.77. |  |